?2002 fairchild semiconductor corporation sgl40n150d rev. a1 igbt sgl40n150d sgl40n150d general description fairchild?s insulated gate bipolar transistor ( igbt) provides low conduction and switching losses. the sgl40n150d is designed for induction heating applications. features ? high speed switching ? low saturation voltage : v ce(sat) = 3.7 v @ i c = 40a ? high input impedance ? built-in fast recovery diode absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description sgl40n150d units v ces collector-emitter voltage 1500 v v ges gate-emitter voltage 25 v i c collector current @ t c = 25 c40 a collector current @ t c = 100 c20 a i cm (1) pulsed collector current 120 a i f diode continuous forward current @ t c = 100 c10 a i fm diode maximum forward current 100 a p d maximum power dissipation @ t c = 25 c 200 w maximum power dissipation @ t c = 100 c80 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 0.625 c / w r jc (diode) thermal resistance, junction-to-case -- 0.83 c / w r ja thermal resistance, junction-to-ambient -- 25 c / w applications home appliances, induction heaters, ih jar, and microwave ovens. g c e to-264 g c e g c e
sgl40n150d rev. a1 sgl40n150d ?2002 fairchild semiconductor corporation electrical characteristics of the igbt t c = 25 c unless otherwise noted electrical characteristics of diode t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 1500 -- -- v i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 40ma, v ce = v ge 3.5 5.0 7.5 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v -- 3.7 4.7 v dynamic characteristics c ies input capacitance v ce = 10v , v ge = 0v, f = 1mhz -- 4000 -- pf c oes output capacitance -- 700 -- pf c res reverse transfer capacitance -- 300 -- pf switching characteristics t d(on) turn-on delay time v cc = 600v, i c = 40a, r g = 51 ? , v ge = 15v, resistive load, t c = 25 c -- 90 200 ns t r rise time -- 230 700 ns t d(off) turn-off delay time -- 245 400 ns t f fall time -- 230 400 ns q g total gate charge v ce = 600v, i c = 40a, v ge = 15v -- 140 170 nc q ge gate-emitter charge -- 25 25 nc q gc gate-collector charge -- 45 60 nc symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 10a -- 1.3 1.8 v t rr diode reverse recovery time i f = 10a, di/dt = 200a/us -- 170 300 ns
sgl40n150d rev. a1 sgl40n150d ?2002 fairchild semiconductor corporation fig 1. typical output characteristics fig 2. typical output characteristics fig 3. collector to emitter saturation voltage vs. case temperature fig 4. typical capacitance vs. collector to emitter voltage fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 02468 0 20 40 60 80 100 20v 15v 10v 12v v ge = 8v common emitter t c = 25 o c collector current, i c [a] collector - emitter voltage, v ce [v] 0246810 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector - emitter voltage, v ce [v] 25 50 75 100 125 1 2 3 4 5 6 i c = 40a i c = 80a common emitter v ge = 15v i c = 20a collector - emitter voltage, v ce [v] case temperature, t c [ o c] 048121620 0 4 8 12 16 20 common emitter t c = 25 o c 40a 80a 20a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 048121620 0 4 8 12 16 20 common emitter t c = 125 0 c 40a 80a 20a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 110 0 1000 2000 3000 4000 5000 6000 common emitter v ge =0v, f=1mhz t c =25 o c c ies c oes c res capacitance [pf] collector - emitter voltage, v ce [v]
sgl40n150d rev. a1 sgl40n150d ?2002 fairchild semiconductor corporation fig 7. turn-off characteristics vs. collector current fig 8. turn-on characteristics vs. collector current fig 9. switching loss vs. collector current fig 10. turn-off characteristics vs. gate resistance fig 11. turn-on characteristics vs. gate resistance fig 12. switching loss vs. gate resistance 20 30 40 50 60 70 80 100 1000 tf common emitter v ge = 15v, r g = 51 ? t c = 25 o c t c = 125 o c tf td(off) switching time [ns] collector current, i c [a] 10 20 30 40 50 60 70 80 90 100 1000 common emitter v ge = 15v, r g = 51 ? t c = 25 o c t c = 125 o c tr td(on) switching time [ns] collector current, i c [a] 10 100 100 1000 tf common emitter v cc = 600v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c tf td(off) switching time [ns] gate resistance, r g [ ? ] 10 100 10 100 1000 common emitter v cc = 600v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c tr td(on) switching time [ns] gate resistance, r g [ ? ] 10 100 1000 10000 eon eoff common emitter v cc = 600v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c eon eoff switching loss [ j] gate resistance, r g [ ? ] 10 20 30 40 50 60 70 80 90 100 1000 10000 eoff eon common emitter v ge = 15v, r g = 51 ? t c = 25 o c t c = 125 o c eoff switching loss [ j] collector current, i c [a]
sgl40n150d rev. a1 sgl40n150d ?2002 fairchild semiconductor corporation fig 14. soa characteristics fig 13. gate charge characteristics fig 15. typical t rr vs. di/dt fig 16. typical t rr vs. forward current fig 17. reverse current vs. reverse voltage fig 18. typical forward voltage drop vs. forward current 012345678910 30 60 90 120 150 180 210 240 270 300 200a/us 100a/us di/dt = 50a/us reverse recovery time, t rr [ns] forward current, i f [a] 0 50 100 150 200 250 300 0 50 100 150 200 250 300 350 400 450 500 i f = 10a reverse recovery time, t rr [ns] di/dt [a/us] 300.0 600.0 900.0 1.2k 1.5k 1e-3 0.01 0.1 1 10 100 1000 100 t c = 125 25 reverse current, i r [ua] reverse voltage, v r [v] 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 t c =125 instantaneous voltage, v f [v] instantaneous forward current, i f [a] 0.1 1 10 100 1000 0.01 0.1 1 10 100 single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 50 s 100 s 1ms dc operation i c max (pulsed) i c max (continuous) collector current, i c [a] collector - emitter voltage, v ce [v] 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 common emitter r l = 15 ? , v cc = 600v t c = 25 o c gate - emitter voltage, v ge [v] gate charge, qg [nc]
?2002 fairchild semiconductor corporation sgl40n150d rev. a1 sgl40n150d package dimension 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] 4.90 0.20 20.00 0.20 (8.30) (8.30) (1.00) (0.50) (2.00) (7.00) (r1.00) (r2.00) ?.30 0.20 (7.00) (1.50) (1.50) (1.50) 2.50 0.20 3.00 0.20 2.80 0.30 1.00 +0.25 ?.10 0.60 +0.25 ?.10 1.50 0.20 6.00 0.20 20.00 0.20 20.00 0.50 5.00 0.20 3.50 0.20 2.50 0.10 (9.00) (9.00) (2.00) (1.50) (0.15) (2.80) (4.00) (11.00) to-264 dimensions in millimeters
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. h5 ?2002 fairchild semiconductor corporation star*power is used under license acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? i 2 c? isoplanar? littlefet? microfet? micropak? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? spm? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet ? vcx?
product folder - fairchild p/n sgl40n150d - copak discrete igbt fairchild semiconductor space space space search | parametric | cross reference space product folders and datasheets application notes space space space find products home >> find products >> space space space space products groups space analog and mixed signal discrete interface logic microcontrollers non-volatile memory optoelectronics markets and applications new products product selection and parametric search cross-reference search technical information buy products technical support my fairchild company sgl40n150d copak discrete igbt related links request samples dotted line how to order products dotted line product change notices (pcns) dotted line support dotted line distributor and field sales representatives dotted line quality and reliability dotted line design tools contents general description | features | applications | product status/pricing/packaging general description fairchild?s insulated gate bipolar transistor ( igbt) provides low conduction and switching losses. sgl40n150d is designed for the induction heating applications. back to top features l high speed switching l low saturation voltage : v ce(sat) = 3.7 v @ i c = 40a l high input impedance l built-in fast recovery diode back to top applications l home appliance l induction heater l ih jar l micro wave oven back to top space datasheet download this datasheet pdf e-mail this datasheet [e- mail] this page print version product status/pricing/packaging product product status pricing* package type leads packing method file:///c|/pdf/sgl40n150d.html (1 of 2) [27-jul-02 4:47:03 pm]
product folder - fairchild p/n sgl40n150d - copak discrete igbt SGL40N150DTU full production $12.27 to-264 3 rail * 1,000 piece budgetary pricing back to top space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///c|/pdf/sgl40n150d.html (2 of 2) [27-jul-02 4:47:03 pm]
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